High-frequency composite part and wireless communications device comprising it

ABSTRACT

A high-frequency module is connected to a transmitting circuit (TX), a receiving circuit (RX) and an antenna (ANT) to control the connections between the transmitting circuit (TX) and the antenna (ANT) and between the receiving circuit (RX) and the antenna (ANT). The module comprises means ( 2 ) for controlling transmitted signals, which includes a first phase-shift circuit ( 5 ) and a high-frequency amplifier ( 4 ) provided between the antenna (ANT) and the transmitting circuit (TX). The high-frequency amplifier ( 4 ) and the first phase-shift circuit ( 5 ) are integrated into a module composed of a plurality of dielectric layers.

FIELD OF THE INVENTION

The present invention relates to a high-frequency composite part used inhigh-frequency bands such as micro-wave bands, etc., particularly to ahigh-frequency composite part for controlling signal lines among atransmitting circuit, a receiving circuit and an antenna in ahigh-frequency circuit of a digital mobile phone, etc., and a wirelesscommunications device comprising such a high-frequency composite part.

BACKGROUND OF THE INVENTION

Wireless communications devices, for instance, mobile phones have becomepopular remarkably in recent years with their functions and servicesimproved increasingly. Taking a mobile phone as an example, there arevarious systems for mobile phones, for instance, EGSM (Extended GlobalSystem for Mobile Communications) and DCS 1800 (Digital Cellular System1800) systems widely used mostly in Europe, a PCS (PersonalCommunications Services) system used in the U.S., and a PDC (PersonalDigital Cellular) system used in Japan. In such mobile phones of digitalcommunications systems, high-frequency switches are used to switch theconnection between a transmitting circuit and an antenna and theconnection between a receiving circuit and an antenna.

One example of the high-frequency switches is disclosed by JapanesePatent Laid-Open No. 2-108301. This high-frequency switch comprises adiode placed between a transmitting circuit and an antenna, and a λ/4phase shift line placed between an antenna and a receiving circuit, thereceiving circuit side of the λ/4 phase shift line being grounded via adiode, thereby constituting a λ/4-type switch circuit for switchingsignal paths by a bias current flowing through each diode.

According to recent rapid expansion of mobile phones, however, afrequency band allocated to each system cannot allow all users to usetheir mobile phones in major cities in advanced countries, resulting indifficulty in connection and thus causing such a problem that mobilephones are sometimes disconnected during communication. Thus, proposalwas made to permit users to utilize a plurality of systems, therebyincreasing substantially usable frequencies, and further to expandserviceable territories and to effectively use communicationsinfrastructure of each system.

In such circumstances, dual-band mobile phones, triple-band mobilephones, etc. have been proposed as mobile phones having new systems.While a usual mobile phone comprises only one transmitting/receivingsystem, the dual-band mobile phone comprises two transmitting/receivingsystems, and the triple-band mobile phone comprises threetransmitting/receiving systems. With these structures, users can chooseand utilize available transmitting/receiving systems among a pluralityof systems. In the dual-band mobile phone and the triple-band mobilephone, there is a high-frequency switch for switching the connectionbetween an antenna and a transmitting circuit or a receiving circuit bytime division, so that bi-directional communications can be carried outwith one antenna shared in transmitting/receiving systems.

The inventors already proposed in Japanese Patent Laid-Open Nos.11-225089 and 11-313003 a high-frequency switch module comprising acombination of a branching circuit (diplexer) for separatinghigh-frequency signals of a plurality of frequency bands and ahigh-frequency switch, with a function of switching the transmittingcircuit and the receiving circuit of a plurality of communicationssystems as a high-frequency switch capable of utilizing a plurality ofcommunications systems, the high-frequency switch module beingconstituted by a multi-layered module integrated with the branchingcircuit (diplexer) the high-frequency switch circuit, etc.

FIG. 21 shows an equivalent circuit of a high-frequency switch disclosedby Japanese Patent Laid-Open No. 2-108301. To connect an antennaterminal ANT to a transmitting circuit TX, positive voltage is givenfrom a power supply means (control circuit) to a terminal VC1. With a DCsignal cut by capacitors 70, 71, 73, 74 and 79, positive voltage givenby the control circuit is applied to a circuit comprising diodes 77, 78to turn the diodes 77, 78 to an ON state. With the diode 77 in an ONstate, there is low impedance between the transmitting circuit TX andthe connection point IP1. Also, with a diode 78 in an ON state, thedistributed constant line 75 is grounded at high frequencies, causingresonance, resulting in the extremely high impedance of the receivingcircuit RX viewed from the side of the connection point IP1. As aresult, the transmitting signal from the transmitting circuit TX is sentto the antenna terminal ANT without leaking to the receiving circuit RX.

However, because the diode 77 placed in series between the antennaterminal ANT and the transmitting circuit TX acts as a resistor in an ONstate, the transmitting signal suffers from large loss. Because thediode through which a bias current should flow at transmitting consumeselectricity from the battery, the mobile phone has a short period ofcommunicatable time, resulting in difficulty in achieving lowelectricity consumption. Further, because parts such as diodes andcapacitors for cutting a DC signal are needed, high-frequency switchmodules are constituted by inevitably large multi-layered modules,making it difficult to provide small and lightweight wirelesscommunications devices of dual band or more.

OBJECTS OF THE INVENTION

Accordingly, an object of the present invention is to provide a smalland lightweight high-frequency composite part for controlling signallines between a transmitting circuit, a receiving circuit and an antennain a wireless communications device such as a mobile phone, etc., whichhas a simple circuit structure excellent in the insertion loss of atransmitting signal with low power consumption.

Another object of the present invention is to provide a small wirelesscommunications device such as a mobile phone, etc. comprising such ahigh-frequency composite part.

DISCLOSURE OF THE INVENTION

As shown in FIG. 1, the present invention provides a high-frequencycomposite part connected among a transmitting circuit TX, a receivingcircuit RX and an antenna ANT, comprising a transmitting signal controlmeans 2 for controlling the connection between the transmitting circuitTX and the antenna ANT, and a receiving signal control means 3 forcontrolling the connection between the receiving circuit RX and theantenna ANT, the transmitting signal control means 2 and the receivingsignal control means 3 cooperating to switch signal paths of ahigh-frequency signal transmitted or received through the antenna ANT.

An important feature of this high-frequency composite part is that thetransmitting signal control means 2 is constituted by a high-frequencyamplifier and a phase-shifting circuit. FIG. 2 is a block diagramshowing the circuit of the transmitting signal control means 2. Thehigh-frequency amplifier 4 has impedance of substantially 50 Ω at workin a frequency band of a transmitting signal, while it is in asubstantially short-circuited state at a stop in a frequency band of areceiving signal. The first phase-shifting circuit 5 controls the phaseangle of the high-frequency signal.

Without the first phase-shifting circuit 5, the high-frequency amplifier4 has impedance corresponding to a substantially short-circuited stateat a stop, so that the receiving signal from the antenna ANT is absorbedby the high-frequency amplifier 4. With the first phase-shifting circuit5, however, the receiving signal from the antenna ANT is phase-shifted,so that the impedance of the transmitting signal control means 2 viewedfrom the antenna side becomes a substantially open state while thehigh-frequency amplifier 4 is at a stop. Accordingly, the receivingsignal is sent to the receiving circuit RX without leaking to thetransmitting circuit TX.

Therefore, the high-frequency composite part of the present invention isconnected among the transmitting circuit, the receiving circuit and theantenna for switching the connection between the transmitting circuitand the antenna and the connection between the receiving circuit and theantenna, comprising a transmitting signal control means comprising afirst phase-shifting circuit and a high-frequency amplifier between theantenna and the transmitting circuit, the high-frequency amplifier andthe first phase-shifting circuit being integrated in a multi-layeredmodule constituted by a plurality of dielectric layers.

The phase-shifting circuit is a circuit for controlling the angle of aphase moved to control the impedance of the transmitting signal controlmeans and the receiving signal control means at desired levels. Thefirst phase-shifting circuit comprises a distributed constant line. Thefirst phase-shifting circuit may have various structures, and in thesimplest structure the first phase-shifting circuit is constituted by adistributed constant line having such a line length that the impedanceof the transmitting signal control means viewed from the antenna side isin a substantially short-circuited state in a frequency band of areceiving signal.

The high-frequency amplifier comprising gallium arsenide GaAssemiconductor chips has such impedance characteristics that it hasimpedance of substantially 50 Ω at work in a frequency band of atransmitting signal, while it is in a substantially short-circuitedstate at a stop in a frequency band of a receiving signal. The firstphase-shifting circuit may be constituted by a distributed constant linehaving a line length of substantially λ/4, wherein λ is the wave lengthof a receiving signal, and the line length is an effective length of aline in a spiral or meander type, etc. Because the actual line lengthmay change depending on the wave length-shortening effects of the lineand dielectric constant of a multi-layered module constituting thedistributed constant line, etc., the line length is preferably set in arange of λ/10-λ/4.

The first phase-shifting circuit in another embodiment comprises adirectional coupler for monitoring part of a transmitting signalamplified by the high-frequency amplifier, and the main line of thedirectional coupler is preferably at least part of the distributedconstant line. The first phase-shifting circuit may comprise a detectorfor detecting part of the branched transmitting signal. In the preferredembodiment, the detector comprises a detecting diode and a smoothingcapacitor, the detecting diode being mounted onto the multi-layeredmodule, and the smoothing capacitor being formed by capacitor electrodesopposing via a dielectric layer inside the multi-layered module.

In each of the above embodiments, the first phase-shifting circuit keepsthe impedance of the transmitting signal control means viewed from theantenna side in a substantially open state in a frequency band of areceiving signal, while the high-frequency amplifier is at a stop.

The high-frequency amplifier in the high-frequency composite part of thepresent invention preferably comprises an amplifier circuit comprising atransistor, an input-matching circuit connected to the input terminal ofthe amplifier circuit, and an output-matching circuit connected to theoutput terminal of the amplifier circuit, each of the input-matchingcircuit and the output-matching circuit comprising a capacitor and aninductor, the transistor of the amplifier circuit being mounted onto themulti-layered module, and the inductors being formed as distributedconstant lines inside the multi-layered module. The capacitor ispreferably formed by electrodes opposing via a dielectric layer insidethe multi-layered module. The above transistor is a field effecttransistor, and the high-frequency amplifier is made of gallium arsenideGaAs, these parts being mounted onto the multi-layered module.

In another preferred embodiment of the present invention, thehigh-frequency composite part comprises a receiving signal control meanscomprising a second phase-shifting circuit and a band pass filterbetween the antenna and the receiving circuit, the second phase-shiftingcircuit and the band pass filter cooperating to keep the impedance ofthe receiving signal control means viewed from the antenna side in asubstantially open state in a frequency band of a transmitting signal.Preferably usable as the passband filter is a surface acoustic wavefilter, a multi-layered-type dielectric filter, a coaxial resonatorfilter or a bulk-wave filter.

In a further preferred embodiment of the present invention, thehigh-frequency composite part comprises a receiving signal control meansbetween an antenna and a receiving circuit, the receiving signal controlmeans comprising a distributed constant line and a diode connectedbetween the distributed constant line and the receiving circuit andgrounded via a capacitor. In the preferred embodiment, the diode ismounted onto the multi-layered module, and the distributed constant lineis formed inside the multi-layered module.

The high-frequency composite part according to a further preferredembodiment of the present invention handles a plurality oftransmitting/receiving systems of different passbands, comprising aplurality of filter circuits of different passbands connected to theantenna terminal, with a transmitting signal control means comprising afirst phase-shifting circuit and a high-frequency amplifier on thedownstream side of at least one filter circuit. The high-frequencyamplifier and the first phase-shifting circuit are integrally formedinside the multi-layered module constituted by a plurality of dielectriclayers. This high-frequency composite part can be used commonly forhigh-frequency signals for a plurality of communications systems fordual-band, triple-band, etc. in which high-frequency signals of aplurality of frequency bands are commonly used.

Each of the first and second filter circuits is preferably an LC circuitcomprising an inductor and a capacitor, the inductor being formed as adistributed constant line inside the multi-layered module, and thecapacitor being formed by capacitor electrodes opposing via a dielectriclayer inside the multi-layered module.

The first phase-shifting circuit comprises a distributed constant line.The first phase-shifting circuit preferably further comprises adirectional coupler for monitoring part of the transmitting signalamplified by the high-frequency amplifier, the main line of thedirectional coupler being part of a distributed constant line of thefirst phase-shifting circuit. The first phase-shifting circuit mayfurther comprise a detector for detecting part of the branchedtransmitting signal. The detector comprises a detecting diode and asmoothing capacitor, the detecting diode being mounted onto themulti-layered module, and the smoothing capacitor being formed bycapacitor electrodes opposing via a dielectric layer inside themulti-layered module.

The high-frequency amplifier comprises an amplifier circuit comprising atransistor, an input-matching circuit connected to the input terminal ofthe amplifier circuit, an output-matching circuit connected to theoutput terminal of the amplifier circuit, each of the input-matchingcircuit and the output-matching circuit comprising a capacitor and aninductor. It is preferable that the transistor of the amplifier circuitis mounted onto the multi-layered module, and that the inductor isformed as a distributed constant line inside the multi-layered module.The capacitor is preferably formed by capacitor electrodes opposing viaa dielectric layer inside the multi-layered module. The transistor ofthe amplifier circuit is preferably a field effect transistor. Thehigh-frequency amplifier is preferably constituted by a gallium arsenideGaAs transistor and mounted onto the multi-layered module.

The wireless communications device of the present invention comprisesthe above high-frequency composite part.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing one example of the high-frequencycomposite part of the present invention;

FIG. 2 is a block diagram showing one example of a transmitting signalcontrol means used in the high-frequency composite part of the presentinvention;

FIG. 3 is a view showing an equivalent circuit of another example of thetransmitting signal control means used in the high-frequency compositepart of the present invention;

FIG. 4 is a view showing an equivalent circuit of a further example ofthe transmitting signal control means used in the high-frequencycomposite part of the present invention;

FIG. 5 is a view showing an equivalent circuit of a further example ofthe transmitting signal control means used in the high-frequencycomposite part of the present invention;

FIG. 6 is a Smith chart showing the impedance characteristics in asubstantially short-circuited state and a substantially open state;

FIG. 7(a) is a Smith chart showing the impedance Zp1 of thehigh-frequency amplifier viewed from the connection point P0 in thetransmitting signal control means of FIG. 3, while the high-frequencyamplifier is at a stop;

FIG. 7(b) is a Smith chart showing the impedance Zip1 of thetransmitting signal control means of FIG. 3 viewed from the connectionpoint IP1 while the high-frequency amplifier is at a stop;

FIG. 8 is a view showing an equivalent circuit of one example of thehigh-frequency amplifier used in the high-frequency composite part ofthe present invention;

FIG. 9 is a block diagram showing one example of the receiving signalcontrol means used in the high-frequency composite part of the presentinvention;

FIG. 10 is a view showing one example of an equivalent circuit of thereceiving signal control means used in the high-frequency composite partof the present invention;

FIG. 11(a) is a Smith chart showing the impedance Zp2 of the band passfilter used in the high-frequency composite part of the presentinvention;

FIG. 11(b) is a Smith chart showing the impedance Zip1 of the receivingsignal control means in the high-frequency composite part of the presentinvention;

FIG. 12 is a view showing an equivalent circuit of a further example ofthe receiving signal control means used in the high-frequency compositepart of the present invention;

FIG. 13 is a view showing an equivalent circuit of one example of thehigh-frequency composite part of the present invention;

FIG. 14 is a view showing an equivalent circuit of a further example ofthe high-frequency composite part of the present invention;

FIG. 15 is a block diagram showing one example of the dual-band,high-frequency composite part of the present invention;

FIG. 16 is a block diagram showing one example of a duplexer used in thedual-band, high-frequency composite part of the present invention;

FIG. 17 is a view showing an equivalent circuit of one example of thedual-band, high-frequency composite part of the present invention;

FIG. 18 is a top view showing the appearance of the integralmulti-layered module containing the dual-band, high-frequency compositepart;

FIG. 19 is an open view showing a circuit structure of each layerconstituting a multilayered module for the dual-band, high-frequencycomposite part of the present invention;

FIG. 20 is a partially cross-sectional view showing an integralmulti-layered module containing the high-frequency composite part of thepresent invention; and

FIG. 21 is a view showing an equivalent circuit of the conventionalhigh-frequency composite part.

THE BEST MODE FOR CARRYING OUT THE INVENTION

The preferred embodiments of the present invention are explained indetail below referring to the attached figures. For the simplicity ofexplanation, EGSM (transmitting frequency: 880-915 MHz, receivingfrequency: 925-960 MHz) is taken as an example of the first signalfrequency band f1. Of course, the present invention can be applied toother communications systems such as a DCS 1800 system (transmitting TX:1710-1785 MHz, receiving RX: 1805-1880 MHz), a PCS system (transmittingTX: 1850-1910 MHz, receiving RX: 1930-1990 MHz), etc.

[1] Constitution of high-frequency composite part

FIG. 1 is a block diagram showing one example of the high-frequencycomposite part of the present invention, which may be called“high-frequency switch module.” This high-frequency composite part is asingle-band high-frequency composite part comprising a transmittingsignal control means 2 between a connection point IP1 and a transmittingcircuit TX, and a receiving signal control means 3 between theconnection point IP1 and a receiving circuit RX.

(A) Transmitting signal control means

As shown in FIG. 2, the transmitting signal control means 2 comprises afirst phase-shifting circuit 5 connected between the connection pointIP1 and the transmitting circuit TX, and a high-frequency amplifier 4.The high-frequency amplifier 4 has such impedance characteristics thatits impedance is substantially 50 Ω at work in a frequency band of atransmitting signal, and that it is in a substantially short-circuitedstate at a stop in a frequency band of a receiving signal. The firstphase-shifting circuit 5 connected to the high-frequency amplifier 4controls the angle of phase moved such that the impedance of thetransmitting signal control means 2 viewed from the side of theconnection point IP1 is a substantially open state.

The term “substantially short-circuited state” means a case where thereal number part R is adjusted to 15 Ω or less, and a case where anabsolute value of the imaginary number part X is adjusted to 15 Ω orless, in the impedance Z expressed by Z=R+jX. Expressed in a Smith chartof FIG. 6, for instance, the “substantially short-circuited state”corresponds to a hatched region on the left side. Also, the term“substantially open state” means a case where the real number part R isadjusted to 150 Ω or more, and a case where an absolute value of theimaginary number part X is adjusted to 100 Ω or more, in the impedance Zexpressed by Z=R+jX. Expressed in a Smith chart, the “substantially openstate” corresponds to a hatched region on the right side in FIG. 6.

The high-frequency amplifier 4 is controlled to be in a substantiallyshort-circuited state (in a hatched portion on the left side in theSmith chart of FIG. 6) at a stop in a frequency band of a receivingsignal. The first phase-shifting circuit 5 is controlled such that theimpedance of the transmitting signal control means 2 viewed from theside of the connection point IP1 is in a hatched portion on the rightside in the Smith chart of FIG. 6. With such a structure, a receivingsignal leaking to the transmitting signal control means can be madeextremely small.

FIG. 3 shows one example of an equivalent circuit of the phase-shiftingcircuit 5. The phase-shifting circuit 5 is constituted by a distributedconstant line 6 whose line length is substantially λ/4 in a frequencyband (receiving frequency: 925-960 MHz) of a receiving signal. Thisphase-shifting circuit is advantageous in that it has a simplestructure. FIG. 7(a) shows the impedance Zp0 of the high-frequencyamplifier 4 viewed from the connection point P0 in the transmittingsignal control means 2 of FIG. 3, and FIG. 7(b) shows the impedance Zip1TX of the transmitting signal control means 2 viewed from the connectionpoint IP1. In this case, the high-frequency amplifier 4 is at a state.As is clear from FIGS. 7(a) and (b), the impedance of the high-frequencyamplifier 4 is in a substantially short-circuited state in a frequencyband of a receiving signal, while the impedance of the transmittingsignal control means 2 viewed from the connection point IP1 is in asubstantially open state by the first phase-shifting circuit 5.

FIG. 4 is a block diagram showing another example of the phase-shiftingcircuit 5. In this phase-shifting circuit 5, capacitors 7, 8 areconnected to both sides of the distributed constant line 6. Thephase-shifting circuit 5 can have a shorter line length than whenconstituted by the distributed constant line 6 only, with advantagesthat it functions as a low-pass filter for attenuating harmonic signalsfrom the high-frequency amplifier 4.

FIG. 5 shows another example of the phase-shifting circuit 5. Thephase-shifting circuit 5 is a directional coupler comprising adistributed constant line 6 as a main line and a distributed constantline 7 as a sub-line. With this phase-shifting circuit 5, part of atransmitting signal from the high-frequency amplifier 4 is taken outfrom one end of the distributed constant line 7 constituting thephase-shifting circuit 5 (directional coupler), attenuated by anattenuator 16 comprising resistors 9, 10, 11 and supplied to thedetector 15. The attenuator 16 attenuates part of the transmittingsignal (high-frequency signal) to such electric power that can behandled by a circuit on the downstream side. After the above part oftransmitting signal is rectified by a detecting diode 12 in the detector15, it is subjected to voltage conversion by a smoothing capacitor 13and a load resistor 14 to generate a detection signal, which is suppliedto the control circuit 16. Compared with a control signal of apredetermined transmitting output level, the detection signal issubjected to feedback to a driver amplifier 81 to make this differencesmall, whereby it is controlled to a targeted transmitting output level.

In the present invention, as shown in FIG. 18, the distributed constantline and the capacitor constituting the first phase-shifting circuit areformed by electrode patterns on a plurality of green sheets made of adielectric material, and green sheets are multi-layered and sintered toform an integral multi-layered module 170, which constitutes a one-chip,high-frequency switch module.

With the attenuator constituted by chip resistors mounted onto themulti-layered module, wires for connecting the phase-shifting circuitand the attenuator can be mounted onto the multi-layered module. In thiscase, the overall dimension of the high-frequency composite part can bemade smaller than when the attenuator is connected to a circuit boardonto which the high-frequency switch module is mounted. Also, with thedetector 15 constituted such that a chip resistor is mounted as a loadresistor 14 onto the multi-layered module, that a smoothing capacitor 13is formed by capacitor electrodes opposing each other via a dielectriclayer inside the multi-layered module, and that a detecting diode 12 ismounted onto the multi-layered module, the overall dimension of thehigh-frequency composite part can be made smaller than when the detector15 is connected to the circuit board separately from the multi-layeredmodule.

Because a transistor and MMIC (microwave monolithic integrated circuit)constituting the high-frequency amplifier 4 have large power consumptionand heat generation, a temperature-sensing device (thermistor) forcompensating temperature variations may be attached to the detector 15to control the temperature of the detector 15.

FIG. 8 shows one example of an equivalent circuit of the high-frequencyamplifier 4. The high-frequency amplifier 4 comprises an input-matchingcircuit 23 comprising an inductor 19 and a capacitor 18, anoutput-matching circuit 26 comprising an inductor 20 and a capacitor 21,and stabilizing circuits 24, 25 each comprising a resistor, a capacitorand an inductor for preventing oscillation, and a field effecttransistor 27.

With the field effect transistor 27 constituting the high-frequencyamplifier 4 mounted onto the multi-layered module 170, the inductorsconstituting the input-matching circuit 23 and the output-matchingcircuit 26 formed by distributed constant lines, and the capacitorsformed by capacitor electrodes opposing each other via a dielectriclayer inside the multi-layered module, the overall dimension of thedevice can be made small.

As shown in FIG. 20, the multi-layered module 170 may be provided with acavity 202 in which the transistor 27 constituting the high-frequencyamplifier and a semiconductor chip 201 made of gallium arsenide GaAs aremounted. With the opening of the cavity 202 properly sealed withplastics such as epoxy resins or covered by a cap 203, the top surfaceof the multi-layered module 170 can be made flat to make it easy tohandle the multi-layered module 170, thereby stabilizing thecharacteristics of the high-frequency amplifier.

The transistor and MMIC constituting the high-frequency amplifier 4 havelarge power consumption and thus large heat generation, with groundedinductance having larger influence on electrical characteristics athigher frequencies. Accordingly, it is important that they have goodbeat dissipation and sufficiently low grounded inductance. Therefore,the multi-layered module may be provided with via-holes immediatelyunder the high-frequency amplifier 4, such that heat generated from thehigh-frequency amplifier 4 is dissipated to the circuit board throughvia-holes. Also, to achieve high heat dissipation and low groundedinductance, metal columns called “bumps” may be formed on the transistorelectrodes on the semiconductor chip to use flip chip bonding forbonding the bumps of the semiconductor chip and the electrodes on thecircuit board.

(B) Receiving signal control means

As shown in FIG. 9, the receiving signal control means 3 comprises asecond phase-shifting circuit 50 connected between the connection pointIP1 and the receiving circuit RX, and a band pass filter 51. The secondphase-shifting circuit 50 connected to the band pass filter 51 controlsthe phase angle of the high-frequency signal, to keep the impedance ofthe receiving signal control means 3 viewed from the side of theconnection point IP1 in a substantially open state.

FIG. 10 shows one example of an equivalent circuit of a phase-shiftingcircuit 50, in which the second phase-shifting circuit is constituted bya distributed constant line. Usable as the band pass filter 51 is asurface acoustic wave filter, a multi-layered-type dielectric filter, acoaxial resonator filter or a bulk-wave filter. FIG. 11(a) shows theimpedance Zp2 of a surface acoustic wave filter (SAW). The surfaceacoustic wave filter has impedance of substantially 50 Ω in a receivingfrequency passband of a receiving signal, while it has low impedance ina transmitting frequency of a transmitting signal. The phase-shiftingcircuit 50 is constituted by a distributed constant line 52 having aline length of substantially 5 λ/16 in a frequency band of atransmitting signal (transmitting frequency: 880-915 MHz), and as shownin FIG. 11(b), the impedance Zip1 RX of the receiving signal controlmeans 3 corresponds to a substantially open state in a frequency band ofa transmitting signal.

FIG. 13 shows an equivalent circuit of the high-frequency composite partcomprising a combination of a receiving signal control means 3 and atransmitting signal control means 2. With such a structure, it ispossible to extremely reduce the leakage of a transmitting signal to thereceiving signal control means with its structure extremely simplified.Without diodes, there is decreased insertion loss between thetransmitting circuit TX and the antenna ANT, resulting in decrease incurrent consumption.

FIG. 12 shows another example of an equivalent circuit of the receivingsignal control means 3. In the receiving signal control means 3, adistributed constant line 55 is connected between the connection pointIP1 and RX, with one end of the distributed constant line 55 on the sideof the receiving circuit RX connected to the cathode of a diode 57, andwith a capacitor 58 connected between the anode of the diode 57 and aground. A series circuit comprising an inductor 59 and a resistor 60 isconnected between the anode of the diode 57 and the control circuit VC1.The resistor 60 controls current while the diode 57 is in an ON state.The inductor 59 functions to enlarge the impedance of the controlcircuit VC1 viewed from the side of the anode of the diode 57, thoughthe inductor 59 may be omitted. In this embodiment, the distributedconstant line 55 has such a line length that its resonance frequency isin a frequency band of a transmitting signal of EGSM.

FIG. 14 shows one example of an equivalent circuit of the high-frequencycomposite part comprising a combination of the receiving signal controlmeans 3 and the transmitting signal control means 2. The high-frequencycomposite part is provided with a current path (not shown) for leadingcurrent to a ground. In this high-frequency switch module, the diode 57is turned on by forward bias voltage from the control circuit VC1 andresonates by the grounding of the distributed constant line 55 by thediode 57 to make the impedance of the receiving circuit RX viewed fromthe side of the connection point IP1 extremely large, so that thetransmitting signal of the transmitting circuit TX is not transmitted tothe receiving circuit RX.

(C) Operation

The high-frequency switch module of the present invention selectstransmitting or receiving in the transmitting/receiving system by theoperation of the high-frequency amplifier 4. With respect to thehigh-frequency composite part having an equivalent circuit shown inFIGS. 13 and 14, operation will be explained in detail below.

(1) High-frequency composite part of FIG. 13

(a) EGSM TX mode

When the transmitting circuit TX is connected to the antenna ANT, thehigh-frequency amplifier 4 is at work. Because the high-frequencyamplifier 4 has impedance of substantially 50 Ω at work, thetransmitting signal is sent to the connection point IP1 via thedistributed constant line. Because the impedance of the receiving signalcontrol means 3 viewed from the connection point IP1 in a frequency bandof a transmitting signal is a substantially open state (high impedance)by the distributed constant line 52 and the surface acoustic wave filter51, the transmitting signal is sent to the antenna ANT without leakingto the receiving circuit.

(b) EGSM RX mode

When the antenna ANT is connected to the receiving circuit RX, thehigh-frequency amplifier 4 is at a stop. Though the impedance of thehigh-frequency amplifier 4 is in a substantially short-circuited stateat a stop in a frequency of a receiving signal, the impedance of thetransmitting signal control means 2 viewed from the connection point IP1in a frequency band of a receiving signal is in a substantially openstate (high impedance) by the distributed constant line 5 connected tothe high-frequency amplifier 4. Therefore, the receiving signal does notleak to the transmitting circuit TX. The surface acoustic wave filter 51constituting the receiving signal control means has impedance ofsubstantially 50 Ω in a frequency of a receiving signal. Therefore, thereceiving signal passes through the distributed constant line 52 and thesurface acoustic wave filter 51 to the receiving circuit RX.

Because the high-frequency composite part of the present invention canachieve high isolation characteristics with an extremely simplestructure, and because a diode can be omitted in both of thetransmitting system and the receiving system, it is possible to suppressthe insertion loss of the transmitting signal. Because diodes 77, 78,capacitors 70, 71, 74, 79, an inductor 76, etc. necessary in theconventional high-frequency composite part as shown in FIG. 21 can beomitted, the high-frequency composite part can be miniaturized. Inaddition, the high-frequency amplifier 4 and the band pass filter 51separately mounted onto a conventionally circuit board can beintegrated, the overall dimension of the high-frequency composite partcan be made further smaller. As a result, the wireless communicationsdevice comprising the high-frequency composite part can also be madesmall in size and reduced in weight.

(2) High-frequency composite part of FIG. 14

(a) EGSM TX mode

To connect the transmitting circuit TX to the antenna ANT, thehigh-frequency amplifier 4 is operated, and positive voltage is givenfrom the control circuit VC1 to turn on the diode 57. Because theimpedance of the high-frequency amplifier 4 is substantially 50 Ω atwork, the transmitting signal passes through the distributed constantline to the connection point IP1. Positive voltage provided from thecontrol circuit VCI is applied to the diode 57 with its DC signal cut bythe capacitors 56, 58, 61 and the capacitor 22 of the high-frequencyamplifier 4, to turn the diode 57 in an ON state. As a result, the diode57 and the capacitor 58 are resonated with the distributed constant line55 grounded at high frequencies, resulting in the extremely largeimpedance of the receiving circuit RX viewed from the side of theconnection point IP1, which leads the transmitting signal to the antennaANT without leaking to the receiving circuit.

(b) EGSM RX mode

To connect the antenna ANT to the receiving circuit RX, thehigh-frequency amplifier 4 stops, and zero voltage is provided to thecontrol circuit VC1. Though the impedance of the high-frequencyamplifier 4 is in a substantially short-circuited state at a stop in afrequency of a receiving signal, the impedance of the transmittingsignal control means 2 viewed from the side of the connection point IP1in a frequency band of a receiving signal is in a substantially openstate (high impedance) by the distributed constant line 5 connected tothe high-frequency amplifier 4, so that the receiving signal does notleak to the transmitting circuit TX. With zero voltage applied to thecontrol circuit VC1, the diode 57 is in an OFF state. With the diode 57in an OFF state, the connection point IP1 is connected to the receivingcircuit RX via the distributed constant line 55, so that the receivingsignal is transmitted to the receiving circuit RX without leaking to thetransmitting circuit TX.

Because in the high-frequency composite part of the present invention,high isolation characteristics can be achieved with an extremely simplestructure, and diodes can be omitted from the transmitting system asdescribed above, the insertion loss of the transmitting signal can besuppressed. Because the diode 77, etc. necessary in the conventionalhigh-frequency switch module are not used, the high-frequency switchmodule can be miniaturized. In addition, the high-frequency amplifier 4that used to be separately mounted onto the conventional circuit boardcan be integrated, the overall dimension of the device can be madesmall, so that the wireless communications device comprising thehigh-frequency composite part can be made small in size and reduced inweight.

[2] Specific examples of high-frequency composite part

FIG. 15 is a block diagram showing one example of the high-frequencycomposite part according to the preferred embodiment of the presentinvention, and FIG. 17 is a view showing an equivalent circuit of oneexample of the high-frequency composite part according to the preferredembodiment of the present invention. This embodiment is concerned abouta dual-band, high-frequency composite part for switching a transmittingcircuit and a receiving circuit in a plurality of differenttransmitting/receiving systems. For the simplicity of explanation, EGSM(transmitting frequency: 880-915 MHz, receiving frequency: 925-960 MHz)is taken as an example of the first signal frequency band f1, andDCS1800system (transmitting TX: 1710-1785 MHz, receiving RX: 1805-1880MHz) is taken as an example of the second signal frequency band f2.

(A) First and second filter circuits

The first and second filter circuits 101, 102 connected to the antennaANT are each constituted by a distributed constant line and a capacitor.A low-pass filter is used as the first filter circuit 101 for allowingthe transmitting and receiving signals of EGSM to pass through whileattenuating the transmitting and receiving signals of DCS1800, and ahigh-pass filter is used as the second filter circuit 102 for allowingthe transmitting and receiving signals of DCS1800 to pass through whileattenuating the transmitting and receiving signals of EGSM.

The low-pass filter 101 is constituted by a distributed constant line401 and a capacitor 403 connected in parallel, a capacitor 404 connectedto a ground, a distributed constant line 402 and a capacitor 405connected in parallel, and a capacitor 406 connected to a ground. Thehigh-pass filter 102 is constituted by a distributed constant line 407and a capacitor 408 connected in parallel, a distributed constant line409 connected to a ground, and a capacitor 410 connected in series tothe distributed constant line 407 and the capacitor 408. With such astructure, receiving signals of the first transmitting/receiving systemand the second transmitting/receiving system can be branched. Inaddition to the above structure, the first and second filter circuits101, 102 may have the following structures (a)-(h):

-   -   (a) A structure in which the first filter circuit 101 is        constituted by a low-pass filter, and the second filter circuit        102 is constituted by a notch filter;    -   (b) A structure in which the first filter circuit 101 is        constituted by a notch filter, and the second filter circuit 102        is constituted by a bandpass filter;    -   (c) A structure in which the first filter circuit 101 is        constituted by a low-pass filter, and the second filter circuit        102 is constituted by a bandpass filter;    -   (d) A structure in which the first filter circuit 101 is        constituted by a notch filter, and the second filter circuit 102        is constituted by a notch filter,    -   (e) A structure in which the first filter circuit 101 is        constituted by a notch filter, and the second filter circuit 102        is constituted by a high-pass filter,    -   (f) A structure in which the first filter circuit 101 is        constituted by a bandpass filter, and the second filter circuit        102 is constituted by a bandpass filter;    -   (g) A structure in which the first filter circuit 101 is        constituted by a bandpass filter, and the second filter circuit        102 is constituted by a notch filter; and    -   (h) A structure in which the first filter circuit 101 is        constituted by a bandpass filter, and the second filter circuit        102 is constituted by a high-pass filter.

(B) Signal line control circuit on EGSM side

(1) Signal line control circuit on the side of EGSM

The first signal line control circuit SW1 and the second signal linecontrol circuit SW2 are placed on the downstream side of the first andsecond filter circuits 101, 102, respectively, the first signal linecontrol circuit SW1 for switching the transmitting circuit TX1 and thereceiving circuit RX1 of EGSM comprising a high-frequency amplifier, adiode and a distributed constant line as main constituents, and thesecond signal line control circuit SW2 for switching the transmittingcircuit TX2 and the receiving circuit RX2 of DCS1800 comprising a diodeand a distributed constant line as main constituents.

The first signal line control circuit SW1 for switching the transmittingcircuit TX1 and the receiving circuit RX1 of EGSM comprises a diode 57and two distributed constant lines 5, 55 and a high-frequency amplifier4 as main constituents. The distributed constant line 5 is disposedbetween the first connection point IP1 and transmitting circuit TX1 in aline for the transmitting and receiving signals of EGSM, and thehigh-frequency amplifier 4 is connected in series to the downstream sideof the distributed constant line 5. The distributed constant line 5 hasa line length of substantially λ/4 in a frequency band of a receivingsignal of EGSM. The impedance characteristics of the high-frequencyamplifier 4 are such that its impedance is substantially 50 Ω at workwhile it is substantially short-circuited at a stop. The distributedconstant line 55 is connected between the first connection point IP1 andRX1, with one end of the distributed constant line 55 on the side of thereceiving circuit RX1 connected to a cathode of the diode 57, with acapacitor 58 connected between the anode of the diode 57 and ground, andwith a series circuit comprising an inductor 59 and a resistor 60connected between the anode of the diode 57 and a control circuit VC1.The distributed constant line 55 has such a line length that itsresonance frequency is in a frequency band of a transmitting signal ofEGSM.

When the receiving signal of EGSM is sent to the receiving circuit RX1,the impedance characteristics of the high-frequency amplifier 4 at astop correspond to a substantially short-circuited state without thedistributed constant line 5, so that the receiving signal is absorbed inthe high-frequency amplifier 4. However, because of the distributedconstant line 5, the impedance viewed from the first connection pointIP1 is in a substantially open state, to that the receiving signal issent to the receiving circuit RX1.

Though not shown in FIG. 17, the high-frequency amplifier 4 comprises acapacitor for shutting off the DC signal. With this structure, the DCcomponent from the high-frequency amplifier 4 does not flow into thereceiving circuit RX1, and the DC signal in voltage applied by thecontrol circuit VC1 to turn on the diode 57 does not flow into thetransmitting circuit TX1.

(C) Signal line control circuit on the side of DCS1800

The signal line control circuit SW2 for switching the receiving circuitRX2 and the transmitting circuit TX2 of DCS1800 comprises two diodes306, 309 and two distributed constant lines 301, 307 as mainconstituents. The diode 306 is placed between the second connectionpoint IP2 through which the transmitting signal and the receivingsignals of DCS1800 pass and the transmitting circuit TX2, with its anodeconnected to the connection point IP2, and with the distributed constantline 301 connected between the cathode of the diode 306 and the ground.The distributed constant line 307 is connected between the connectionpoint IP2 and the receiving circuit RX2, with one end of the distributedconstant line 307 on the side of the receiving circuit RX2 connected tothe cathode of the diode 309, with the capacitor 310 connected betweenthe anode of the diode 309 and the ground, and with the series circuitcomprising an inductor 311 and a resistor 312 connected between theanode of the diode 309 and the control circuit VC2. The distributedconstant line 301 has such a line length that resonance frequency withthe capacitor 302 is in a frequency band of a transmitting signal ofDCS1800.

The low-pass filter circuit is placed between the transmitting . circuitTX2 and the connection point IP2. This low-pass filter circuit ispreferably a π-type low-pass filter constituted by a distributedconstant line 305 and capacitors 302, 303, 304. The low-pass filtercircuit is compositely formed between elements constituting the signalline control circuits, though the low-pass filter circuit may bedisposed on the input or output side of the signal line control circuit.

To connect the second transmitting circuit TX2 to the second filtercircuit 102, positive voltage is applied from the control circuit VC2.With a DC signal removed by capacitors 300, 308, 310, 304, 303, 302, and410, the positive voltage provided from the control circuit VC2 isapplied to a circuit comprising diodes 306, 309 to turn them on. Whenthe diode 306 is in an ON state, impedance is low between the secondtransmitting circuit TX2 and the connection point IP2. With the diode309 in an ON state and the capacitor 310, the distributed constant line307 is grounded at high frequencies, causing resonance, resulting in theextremely high impedance of the second receiving circuit RX2 viewed fromthe connection point IP2. Accordingly, the transmitting signal from thesecond transmitting circuit TX2 is transmitted to the second filtercircuit 102 without leaking to the second receiving circuit RX2.

When the second receiving circuit RX2 is connected to the second filtercircuit 102, zero voltage is applied to the control circuit VC2, puttingthe diodes 306, 309 in an OFF state. With the diode 309 in an OFF state,the connection point IP2 and the second receiving circuit RX2 areconnected via the distributed constant line 307. With the diode 306 inan OFF state, the impedance of the second transmitting circuit TX2 ishigh when viewed from the side of the connection point IP2. Accordingly,the receiving signal from the second filter circuit 102 is sent to thesecond receiving circuit RX2 without leaking to the second transmittingcircuit TX2.

The above control of high-frequency signal lines can be carried out bycontrolling the operation states of the control circuits VC1, VC2 andthe high-frequency amplifier as shown in Table 1 to change thetransmitting/receiving modes of EGSM and DCS1800. TABLE 1 High-FrequencyMode VC1 VC2 Amplifier EGSM TX High Low At work EGSM RX Low Low At stopDCS1800 TX Low High At stop DCS1800 RX Low Low At stop

(D) Multi-layered structure of high-frequency composite part

FIG. 18 is a plan view showing the high-frequency composite part of thepresent embodiment, and FIG. 19 is a view showing the structure of eachlayer constituting the multi-layered module of FIG. 18. In thisembodiment, the first and second filter circuits, the low-pass filtercircuits, the distributed constant line of the signal line controlcircuit and the inductors and capacitors of the matching circuit of thehigh-frequency amplifier are formed in the multi-layered module, whilediodes, semiconductor chips of the high-frequency amplifier, andhigh-capacitance capacitors, resistors and inductors that cannot becontained in the multi-layered module are mounted as chip parts onto themulti-layered module, thereby constituting a one-chip-type, dual-band,high-frequency composite part.

This multi-layered module is produced by forming green sheets of 10 μmto 500 μm in thickness made of a low-temperature sinterable ceramicdielectric material, printing an Ag-based conductive paste on each greensheet to form a desired electrode pattern, integrally laminating aplurality of green sheets with electrode patterns, and then sinteringthe resultant laminate. Most line electrodes preferably have a width of100 μm to 400 μm. The internal structure of the multi-layered modulewill be explained in the order of lamination.

The lowermost green sheet 13 is provided substantially on an entiresurface with a ground electrode 120, which has extensions for connectingto terminal electrodes formed on the side surface.

A green sheets 12 provided with capacitor electrodes 122, 123 and a lineelectrode 121 for constituting the input-matching circuit andoutput-matching circuit of the high-frequency amplifier, a green sheet11 provided with five line electrodes 126, 127, 128, 129, 130 andcapacitor electrodes 124, 125, and a green sheet 10 provided with fourline electrodes 47, 48, 133, 134 are successively laminated on the greensheet 13 laminated thereon are a green sheet 9 provided with fivethrough-hole electrodes (shown by black circles in the view), and then agreen sheet 8 provided with five through-hole electrodes and a groundelectrode 32.

Line electrodes are connected in regions sandwiched by two groundelectrodes 120, 32. Specifically, the line electrodes 126 and 134 areconnected via through-hole electrodes to constitute part of thedistributed constant line 5; the line electrodes 129 and 133 areconnected via through-hole electrodes to constitute the distributedconstant line 55; the line electrodes 128 and 48 are connected viathrough-hole electrodes to constitute the distributed constant line 307;and the line electrodes 127 and 47 are connected via through-holeelectrodes to constitute the distributed constant line 301. The lineelectrode 121 constitutes a distributed constant line 20 for theoutput-matching circuit 26 of the high-frequency amplifier 4; thecapacitor electrode 122 and the ground electrode 120 constitutes thecapacitor 21 of the output-matching circuit 26; the capacitor electrode123 and the ground electrode 120 constitutes a capacitor 18 for theinput-matching circuit 23 of the high-frequency amplifier 4; thecapacitor electrode 122 and the capacitor electrode 124 constitutes aDC-cutting capacitor 22 of the high-frequency amplifier 4; and thecapacitor electrode 123 and the capacitor electrode 125 constitutes aDC-cutting capacitor 17 of the high-frequency amplifier 4. The lineelectrode 130 constitutes the distributed constant line 19 of theinput-matching circuit 23.

In this embodiment, capacitors for the input-matching circuit 23 andoutput-matching circuit 26 of the high-frequency amplifier 4 are formedin multi-layered module, though the above capacitors may be mounted ontothe multi-layered module as chip capacitors to have properly desiredcapacitance if fine adjustment is needed.

A green sheet 7 laminated on the green sheet 8 is provided withcapacitor electrodes 136, 137, 138, 139, 140, 141, 142 and 143. A greensheet 6 laminated thereon is provided with capacitor electrodes 144,145, 147 and a ground electrode 146. A green sheet 5 laminated thereonis provided with capacitor electrodes 148, 149, 150 laminated thereonare a green sheet 4 provided with line electrodes 151, 152, 153, 154,155, a green sheet 3 provided with line electrodes 156, 157, 158 andconnection lines, and a green sheet 2 provided with through-holeelectrodes. The uppermost green sheet 1 is provided with lands formounting elements.

Capacitor electrodes 136, 137, 138, 139, 140, 141, 143 on the greensheet 7 laminated on the green sheet 8 having an upper ground electrode32 constitutes capacitors with the ground electrode 32. Specifically,the capacitor electrode 143 constitutes a capacitor 404; the capacitorelectrode 136 constitutes a capacitor 406; the capacitor electrode. 140constitutes a capacitor 58; the capacitor electrode 138 constitutes acapacitor 302; the capacitor electrode 139 constitutes a capacitor 303;and the capacitor electrode 141 constitutes a capacitor 310.

Capacitor electrodes formed on the green sheets 5, 6, 7 constitutecapacitance with each other. Specifically, a capacitor 410 isconstituted between the capacitor electrodes 142 and 147; a capacitor408 is constituted between the capacitor electrodes 147 and 150, acapacitor 405 is constituted between the capacitor electrodes 137, 136and 144; a capacitor 304 is constituted between the capacitor electrodes138, 139 and 145. Further, parasitic capacitance between the lineelectrodes 155 and 158 constitutes a capacitor 403 in the equivalentcircuit.

Line electrodes 155, 158 constitute the distributed constant line 401 inthe green sheets 3, 4; line electrodes 154, 157 constitute thedistributed constant line 407, line electrode 153 constitute thedistributed constant line 409; line electrodes 152, 156 constitute thedistributed constant line 305; and a line electrode 151 constitutes thedistributed constant line 402. Lines on the green sheet 3 except for theline electrodes 156, 157, 158 are wiring lines.

These green sheets are pressure-bonded and integrally sintered toprovide a multi-layered module 100 of 9.6 mm×5.0 mm×1.0 mm in outerdimension. This multi-layered module 100 is provided with terminalelectrodes on the side surface. As shown in FIG. 18, mounted onto thismulti-layered module are diodes 57, 306, 309, a transistor 27, chipcapacitors 56, 308, 411, chip inductors 59, 311 and capacitors,resistors and inductors for constituting the stabilizing circuit of thehigh-frequency amplifier. Incidentally, GND denotes a ground terminal.

In this embodiment, distributed constant lines for the first and secondsignal line control circuits are formed in the multi-layered module inregions sandwiched by the ground electrodes. With this structure,interference between the signal line control circuits, the branchingcircuits (diplexer) and the low-pass filter circuits is prevented.Because regions sandwiched by the ground electrodes are located in alower portion of the multi-layered module, it is easy to get a groundpotential. In this embodiment, the multi-layered module is provided witheach terminal on the side surface to have such a structure as to enablesurface mounting. The terminals on the side surface are an ANT terminal,a TX2 terminal of DCS 1800, a TX1 terminal of EGSM, an RX1 terminal ofEGSM, an RX2 terminal of DCS1800, a ground terminal GND, and controlterminals VC1, VC2. In place of the terminals on the side surface,internal wiring may be led to the bottom surface of the multi-layeredmodule via through-holes as terminals of BGA (Ball Grid Array), LGA(Land Grid Array), etc.

When the high-frequency composite part of the present invention is usedfor a dual-band mobile phone, small battery consumption has beenconfirmed, resulting in mobile phones with low current consumption. Aslong as the high-frequency composite part comprises a combination of ahigh-frequency amplifier and a phase-shifting circuit as a transmittingsignal control means, it is within the range of the present invention.

Though the structure and operation of the high-frequency composite partof the present invention has been explained with respect to thedual-band system of EGSM and DCS1800, the use of a duplexer comprising acombination of two filters as shown in FIG. 16 in place of the secondsignal line control circuits can provide a dual-mode high-frequencycomposite part, for instance, for a TDMA system such as EGSM and a CDMAsystem such as W-CDMA (wideband CDMA), and a wireless communicationsdevice such as a mobile phone, etc. comprising such a high-frequencycomposite part.

1-32. (canceled)
 33. A high-frequency composite part for controlling theconnection between a transmitting circuit and an antenna, and theconnection between a receiving circuit and said antenna comprising: aplurality of filter circuits having different passbands; an amplifiercircuit comprising a transistor, an input terminal, and an outputterminal; an input-matching circuit connected to the input terminal ofsaid amplifier circuit; an output-matching circuit connected to theoutput terminal of said amplifier circuit; a phase-shifting circuitcontrolling the phase angle of a high-frequency signal connected to saidoutput-matching circuit; a high-frequency switch circuit; said filtercircuits each comprising an inductor and a capacitor; saidinput-matching circuit and said output-matching circuit each comprisingan inductor and a capacitor; said phase-shifting circuit comprising adistributed constant line; and said high-frequency switch circuitcomprising a diode and an inductor, wherein said amplifier circuit, saidinput-matching circuit, said output-matching circuit, saidphase-shifting circuit, said high-frequency switch circuit, and at leastparts of inductors and capacitors of said filter circuits are integratedin a multi-layered module laminated by a plurality of dielectric layersand electrode patterns formed thereon.
 34. The high-frequency compositepart according to claim 33, wherein said distributed constant lineconstituting said phase-shifting circuit are formed by said electrodepatterns, and chips of the other parts of inductors and capacitors, saiddiode and said transistor are mounted on said multi-layered module. 35.The high-frequency composite part according to claim 34, wherein acavity is provided with said multi-layered module, said transistor ismounted in said cavity, and the opening of said cavity is sealed withplastics.
 36. The high-frequency composite part according to claim 34,wherein a via-hole is provided with said multi-layered module for heatdissipation, and said transistor is disposed on said via-hole.
 37. Thehigh-frequency composite part according to claim 34, wherein saidtransistor is subjected to flip chip bonding.
 38. The high-frequencycomposite part according to claim 34, wherein said electrode patternsare led to side surfaces of said multi-layered module to connect withedge terminals formed on the side surfaces thereof so as to enablesurface mounting.
 39. The high-frequency composite part according toclaim 34, wherein said electrode patterns are led to the bottom surfaceof the multi-layered module via through-holes as terminals of BGA (BallGrid Array) or LGA (Land Grid Array) so as to enable surface mounting.40. The high-frequency composite part according to claim 34, whereinsaid multi-layered module comprises a plurality of ground electrodesformed by electrode patterns electrically connected to one another, andinductors and/or capacitors constituting said filter circuits, saidamplifier circuit, said input-matching circuit, said output-matchingcircuit, said phase-shifting circuit and said high-frequency switchcircuit are ground to any one of said ground electrodes.
 41. Thehigh-frequency composite part according to claim 33, wherein saidphase-shifting circuit is a directional coupler.
 42. The high-frequencycomposite part according to claim 33, wherein said phase-shiftingcircuit is a low-pass filter.